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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3851 2SC3851A DESCRIPTION With TO-220F package Complement to type 2SA1488/1488A APPLICATIONS Audio and PPC high voltage power supply ,and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO PARAMETER Collector-base voltage VCEO INC Collector-emitter voltage ES ANG H 2SC3851 2SC3851A 2SC3851 2SC3851A MIC E Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 80 100 60 80 6 4 1 UNIT V V VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature V A A W ae ae TC=25ae 25 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SC3851 IC=25mA ; IB=0 2SC3851A VCEsat Collector-emitter saturation voltage 2SC3851 2SC3851A IEBO hFE fT COB Emitter cut-off current DC current gain Transition frequency Output capacitance IC=2.0A;IB=0.2A VCB=80V;IE=0 VCB=100V;IE=0 VEB=6V; IC=0 IC=1A ; VCE=4V IC=0.2A ; VCE=12V IE=0 ; VCB=10V;f=1MHz CONDITIONS 2SC3851 2SC3851A SYMBOL MIN 60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 80 0.5 0.1 0.1 0.1 40 15 320 MHz V mA mA mA ICBO Collector cut-off current Switching time ton ts tf Fall time Turn-on time Storage time ANG H INC MIC E SE DUC ON 0.20 1.00 0.30 60 TOR |I |I |I pF s s s IC=2.0A IB1=-IB2=0.2A VCC=12V ,RL=6| 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3851 2SC3851A CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3851 2SC3851A CHA IN E SEM NG OND IC TOR UC 4 |
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